Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects

This paper presents the sidewall-related narrow channel effects on the current conduction in mesa-isolated fully-depleted ultra-thin SOI NMOS devices. As verified by the 3D simulation results, the dosed-form analytical model predicts that in the subthreshold region the channel current near the sidewall dominates due to narrow channel effects.