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Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects

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2 Author(s)
Kuo, J.B. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Su, K.W.

This paper presents the sidewall-related narrow channel effects on the current conduction in mesa-isolated fully-depleted ultra-thin SOI NMOS devices. As verified by the 3D simulation results, the dosed-form analytical model predicts that in the subthreshold region the channel current near the sidewall dominates due to narrow channel effects

Published in:

SOI Conference, 1997. Proceedings., 1997 IEEE International

Date of Conference:

6-9 Oct 1997

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