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Double gate dynamic threshold voltage (DGDT) SOI MOSFETs for low power high performance designs

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3 Author(s)
Liqiong Wei ; Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Zhanping Chen ; K. Roy

In this paper, double gate dynamic threshold voltage (DGDT) SOI MOSFETs, which combine the advantages of DTMOS and FD SOI MOSFETs without the limitation of the supply voltage, are simulated using SOI-SPICE4.4. The threshold voltages, leakage currents and drive currents for FD SOI MOSFETs and DGDT SOI MOSFETs are compared. DGDT SOI MOSFETs show symmetric characteristics and the best IonI(off)/. Excellent DC inverter characteristics down to 0.15 V and good full adder performance at 1V are shown. The propagation delay and the average power consumption of the full adder are 0.625 ns and 11.5 μW, respectively. It can be seen that DGDT SOI MOSFET is a good candidate for low power high performance designs

Published in:

SOI Conference, 1997. Proceedings., 1997 IEEE International

Date of Conference:

6-9 Oct 1997