Cart (Loading....) | Create Account
Close category search window
 

Double gate dynamic threshold voltage (DGDT) SOI MOSFETs for low power high performance designs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Liqiong Wei ; Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Zhanping Chen ; Roy, K.

In this paper, double gate dynamic threshold voltage (DGDT) SOI MOSFETs, which combine the advantages of DTMOS and FD SOI MOSFETs without the limitation of the supply voltage, are simulated using SOI-SPICE4.4. The threshold voltages, leakage currents and drive currents for FD SOI MOSFETs and DGDT SOI MOSFETs are compared. DGDT SOI MOSFETs show symmetric characteristics and the best IonI(off)/. Excellent DC inverter characteristics down to 0.15 V and good full adder performance at 1V are shown. The propagation delay and the average power consumption of the full adder are 0.625 ns and 11.5 μW, respectively. It can be seen that DGDT SOI MOSFET is a good candidate for low power high performance designs

Published in:

SOI Conference, 1997. Proceedings., 1997 IEEE International

Date of Conference:

6-9 Oct 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.