By Topic

Oxygen partial pressure influence on internal oxidation of SIMOX wafers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Ericsson, P. ; Dept. of Solid State Electron., Chalmers Univ. of Technol., Goteborg, Sweden ; Bengtsson, Stefan

Internal oxidation (ITOX) of the buried oxide (BOX) of low dose SIMOX wafers has attracted a lot of attention in the last few years for its beneficial effect on the electrical and structural properties of the BOX. Models have been proposed to explain the ITOX process in terms of atomic oxygen diffusing through the silicon device layer to the BOX where it reacts with the bottom silicon interface to produce new silicon dioxide. Using the models with fitted parameters has shown good agreement with experimental data. However, the details regarding the dissociation of oxygen molecules before entering the device layer as well as the reaction of atomic oxygen with the back device layer surface were left unattended. The results presented suggest that these two processes could have a significant impact on the oxidation results and thus need to be studied to arrive at a valid model for the ITOX process

Published in:

SOI Conference, 1997. Proceedings., 1997 IEEE International

Date of Conference:

6-9 Oct 1997