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High threshold modal gain based on highly stacked InGaAs quantum dot laser diode

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4 Author(s)
Tanoue, F. ; Grad. Sch. of Syst. Design, Tokyo Metropolitan Univ., Hino, Japan ; Sugawara, H. ; Akahane, K. ; Yamamoto, N.

A threshold modal gain of up to 103 cm-1 was observed for 19-stacked InGaAs quantum dot (QD) laser diodes with a high QD volume density.

Published in:

Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International

Date of Conference:

7-10 Oct. 2012