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>200 nm gain-bandwidth hybrid silicon laser array using quantum well intermixing

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3 Author(s)
Jain, S.R. ; ECE Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA ; Sysak, M.N. ; Bowers, J.E.

Using a single epitaxial structure, multiple CW operational DFB lasers with backside photodetectors, emitting over a 200 nm range from 1250-1450 nm are integrated on silicon. Four bandgaps spread over >;100 nm were realized using quantum well intermixing for increased spectral gain.

Published in:

Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International

Date of Conference:

7-10 Oct. 2012