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A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers

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4 Author(s)
Miyamoto, T. ; Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan ; Takeuchi, K. ; Koyama, F. ; Iga, K.

We propose a novel quantum-well (QW) structure for GaInNAs-GaAs lasers that can emit 1.3 μm or longer wavelength light. The idea is insertion of lattice-matched GaInNAs intermediate layers between well and barrier, which is effective for elongating the emission wavelength and reducing well thickness. It is shown that 1.3-μm emission is achievable by using the proposed GaInNAs-GaAs QW with a well thickness thinner than that of conventional rectangular GaInNAs QWs. This structure will relax the design limitation of strained GaInNAs layers.

Published in:

Photonics Technology Letters, IEEE  (Volume:9 ,  Issue: 11 )