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35-GHz static and 48-GHz dynamic frequency divider ICs using 0.2-μm AlGaAs/GaAs-HEMTs

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9 Author(s)
Zhihao Lao ; Fraunhofer-Inst. of Appl. Solid-State Phys., Freiburg, Germany ; W. Bronner ; A. Thiede ; M. Schlechtweg
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Two static and two dynamic frequency dividers based on enhancement and depletion 0.2-μm gate length AlGaAs/GaAs-high electron mobility transistor (HEMT) (fT=60 and 55 GHz) technology were designed and fabricated. High-speed operations up to 35 GHz for the static frequency dividers and 48 GHz for the dynamic dividers, respectively, have been achieved. The single-ended input and differential outputs to ground simplify many applications. The power consumption is 250 mW for the divide-by-two dividers and 350 mW for the divide-by-four dividers using two supply voltages of 4 and -2.5 V

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IEEE Journal of Solid-State Circuits  (Volume:32 ,  Issue: 10 )