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A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs

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5 Author(s)
Lizzit, D. ; DIEGM, Univ. of Udine, Udine, Italy ; Palestri, P. ; Esseni, D. ; Conzatti, F.
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This paper reports a simulation study investigating the drive current in the prototypical SiGe n-type FinFET depicted in Fig.1 and for different values of the Ge content x in the Si(1-x)Gex active layer. To this purpose we performed strain simulations, band-structure calculations and Multi-Subband Monte Carlo transport simulations accounting for the effects of the Ge content on both the band-structure and scattering rates in the transistor channel. Our results suggest that the largest on-current may be obtained with a simple Si active layer.

Published in:

Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European

Date of Conference:

17-21 Sept. 2012

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