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Millimeter-Wave Power Sensor Based on Silicon Rod Waveguide

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5 Author(s)
Andrey A. Generalov ; Department of Radio Science and Engineering, Millilab, and SMARAD Centre of Excellence, Aalto University School of Electrical Engineering, Aalto, Finland ; Dmitri V. Lioubtchenko ; Juha A. Mallat ; Victor Ovchinnikov
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This paper presents a novel type of RF power sensor, based on a metallic structure integrated into an mm-wave range dielectric rod waveguide made of Si. The metallic structure is employed as a bolometer. Numerical simulations of temperature distribution are shown. A prototype was tested at frequencies of 45 GHz-1 THz and a power levels from 0.1 to 500 mW. The power sensor showed the sensitivity of 0.51 Ω/mW resistance change.

Published in:

IEEE Transactions on Terahertz Science and Technology  (Volume:2 ,  Issue: 6 )