Cart (Loading....) | Create Account
Close category search window

Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Paramahans Manik, Prashanth ; Center of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India ; Kesh Mishra, Ravi ; Pavan Kishore, V. ; Ray, Prasenjit
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We report low resistance Ohmic contacts on n-Ge using a thin ZnO interfacial layer (IL) capped with Ti. A 350°C post metallization anneal is used to create oxygen vacancies that dope ZnO heavily n-type (n+). Rectifying Ti/n-Ge contacts become Ohmic with 1000× higher reverse current density after insertion of n+-ZnO IL. Specific resistivity of ∼1.4×10-7Ωcm2 is demonstrated on epitaxial n+-Ge (2.5×1019cm-3) layers. Low resistance with ZnO IL can be attributed to (a) low barrier height from Fermi-level unpinning, (b) good conduction band alignment between ZnO and Ge, and (c) thin tunneling barrier due to the n+ doping.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 18 )

Date of Publication:

Oct 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.