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Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer

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9 Author(s)
Paramahans Manik, Prashanth ; Center of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India ; Kesh Mishra, Ravi ; Pavan Kishore, V. ; Ray, Prasenjit
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We report low resistance Ohmic contacts on n-Ge using a thin ZnO interfacial layer (IL) capped with Ti. A 350°C post metallization anneal is used to create oxygen vacancies that dope ZnO heavily n-type (n+). Rectifying Ti/n-Ge contacts become Ohmic with 1000× higher reverse current density after insertion of n+-ZnO IL. Specific resistivity of ∼1.4×10-7Ωcm2 is demonstrated on epitaxial n+-Ge (2.5×1019cm-3) layers. Low resistance with ZnO IL can be attributed to (a) low barrier height from Fermi-level unpinning, (b) good conduction band alignment between ZnO and Ge, and (c) thin tunneling barrier due to the n+ doping.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 18 )

Date of Publication:

Oct 2012

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