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A V-Band Divide-by-Three Injection-Locked Frequency Divider in 28 nm CMOS

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5 Author(s)
Hsieh-Hung Hsieh ; Mixed-Signal RF Solution Division (MRSD), Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan ; Yi-Hsuan Liu ; Tzu-Jin Yeh ; Chewn-Pu Jou
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In this letter, the 28 nm CMOS divide-by-three injection-locked frequency divider (ILFD) operating at the V band is presented for the first time. Based on a differential direct injection scheme, the proposed circuit can perform a division ratio of three while an enhanced locking range is achieved due to superior injection efficiency. From the measured results, the core circuit consumes a dc power of 8.8 mW from a 1 V supply voltage. At an incident power level of 0 dBm, the divider exhibits a locking range from 52.61 to 55.12 GHz. Within this frequency range, the output power and phase noise are kept around -5 dBm and -125 dBc/Hz at a 1 MHz offset, respectively.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:22 ,  Issue: 11 )