Cart (Loading....) | Create Account
Close category search window
 

Analytical Solution for Steady-State and Transient Temperature Fields in Vertically Stacked 3-D Integrated Circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Choobineh, L. ; Mech. & Aerosp. Eng. Dept., Univ. of Texas, Arlington, TX, USA ; Jain, A.

Vertical integration for microelectronics poses significant challenges related to dissipation of heat generated in multiple device planes. Thermal management of 3-D integrated circuits (3-D ICs) is recognized to be one of the foremost technological and research challenges currently blocking the widespread adoption of this promising technology. The computation of steady-state and transient temperature fields in a 3-D IC is critical for determining the thermal characteristics of a 3-D IC and for evaluating any candidate thermal management technology. This paper presents an analytical solution for the 3-D temperature field in a 3-D IC based on the solution of the governing energy equations using Fourier series expansion for steady-state temperature fields. In addition, this approach is combined with Laplace transforms to determine transient temperature fields. Comparison of the temperature fields predicted by the proposed models with finite-element simulations shows excellent agreement. The model is used to compute the temperature field in a representative 3-D IC, and it is shown that by utilizing a thermal-friendly floorplanning approach, the maximum temperature of the 3-D IC is reduced substantially.

Published in:

Components, Packaging and Manufacturing Technology, IEEE Transactions on  (Volume:2 ,  Issue: 12 )

Date of Publication:

Dec. 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.