By Topic

A 288-GHz lens-integrated balanced triple-push source in a 65-nm CMOS technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yan Zhao ; Inst. for High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal, Germany ; Grzyb, J. ; Pfeiffer, U.R.

A 288-GHz lens-integrated high-power source implemented in a 65-nm CMOS technology is presented. The source consists of two free-running triple-push ring oscillators locked out-of phase by magnetic coupling. The oscillators drive a differential on-chip ring antenna, which illuminates a hyper-hemispherical silicon lens through the backside of the die. An on-wafer breakout of the oscillators core achieves a peak output power of -1.5 dBm with a 280-mW DC power consumption. The radiated power of the packaged source is -4.1 dBm, which is the highest reported radiated power of a single CMOS source beyond 200 GHz. The source die including the antenna occupies only 500×650 μm2.

Published in:

ESSCIRC (ESSCIRC), 2012 Proceedings of the

Date of Conference:

17-21 Sept. 2012