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A 288-GHz lens-integrated balanced triple-push source in a 65-nm CMOS technology

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3 Author(s)
Yan Zhao ; Institute for High-Frequency and Communication Technology, University of Wuppertal, Rainer-Gruenter-Str. 21, D-42119 Wuppertal, Germany ; Janusz Grzyb ; Ullrich R. Pfeiffer

A 288-GHz lens-integrated high-power source implemented in a 65-nm CMOS technology is presented. The source consists of two free-running triple-push ring oscillators locked out-of phase by magnetic coupling. The oscillators drive a differential on-chip ring antenna, which illuminates a hyper-hemispherical silicon lens through the backside of the die. An on-wafer breakout of the oscillators core achieves a peak output power of -1.5 dBm with a 280-mW DC power consumption. The radiated power of the packaged source is -4.1 dBm, which is the highest reported radiated power of a single CMOS source beyond 200 GHz. The source die including the antenna occupies only 500×650 μm2.

Published in:

ESSCIRC (ESSCIRC), 2012 Proceedings of the

Date of Conference:

17-21 Sept. 2012