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A 288-GHz lens-integrated high-power source implemented in a 65-nm CMOS technology is presented. The source consists of two free-running triple-push ring oscillators locked out-of phase by magnetic coupling. The oscillators drive a differential on-chip ring antenna, which illuminates a hyper-hemispherical silicon lens through the backside of the die. An on-wafer breakout of the oscillators core achieves a peak output power of -1.5 dBm with a 280-mW DC power consumption. The radiated power of the packaged source is -4.1 dBm, which is the highest reported radiated power of a single CMOS source beyond 200 GHz. The source die including the antenna occupies only 500×650 μm2.