By Topic

Design of a fully integrated CMOS self-testable RF power amplifier using a thermal sensor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Nathalie Deltimple ; IMS Laboratory, University of Bordeaux, CNRS UMR5218, Talence, France ; José Luis González ; Josep Altet ; Yohann Luque
more authors

This paper presents a wideband RF power amplifier (PA) dedicated to 2GHz applications integrating a contact-less temperature sensor that allows on-chip observation and testing of the PA. Indeed, based on the static and dynamic local temperature changes caused by the PA operation, the thermal sensor can sense parameters such as output power or efficiency. This principle is applied to a 65nm CMOS PA with an OCP1 of 21dBm. We demonstrate that the output voltage of the thermal sensor follows the PA efficiency under single tone and multi-tone input signal conditions.

Published in:

ESSCIRC (ESSCIRC), 2012 Proceedings of the

Date of Conference:

17-21 Sept. 2012