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Thin-Film ZnO Charge-Trapping Memory Cell Grown in a Single ALD Step

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6 Author(s)
Oruc, F.B. ; Dept. of Electr. & Electron. Eng., Bilkent Univ., Ankara, Turkey ; Cimen, F. ; Rizk, A. ; Ghaffari, M.
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A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm2/V·s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the Idrain- Vgate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 12 )

Date of Publication:

Dec. 2012

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