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Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers

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6 Author(s)
Li, J. ; Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA ; Majety, S. ; Dahal, R. ; Zhao, W.P.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4764533 

Hexagonal boron nitride (hBN) epilayers have been synthesized by metal organic chemical vapor deposition and their dielectric strength, optical absorption, and potential as a deep ultraviolet (DUV) detector material have been studied. Based on the graphene optical absorption concept, the estimated band-edge absorption coefficient of hBN is about 7 × 105/cm, which is more than 3 times higher than the value for wurtzite AlN (∼2 × 105 /cm). The dielectric strength of hBN epilayers exceeds that of AlN and is greater than 4.4 MV/cm based on the measured result for an hBN epilayer released from the host sapphire substrate. The hBN epilayer based DUV detectors exhibit a sharp cut-off wavelength around 230 nm, which coincides with the band-edge photoluminescence emission peak and virtually no responses in the long wavelengths. Based on the present study, we have identified several advantageous features of hBN DUV photodetectors: (1) low long wavelength response or high DUV to visible rejection ratio; (2) requiring very thin active layers due to high optical absorption; (3) high dielectric strength and chemical inertness and resistance to oxidation and therefore suitable for applications in extreme conditions; (4) high prospects of achieving flexible devices; and (5) possible integration with graphene optoelectronics due to their similar structures and lattice constants.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 17 )

Date of Publication:

Oct 2012

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