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Stability Considerations for Silicon Carbide Field-Effect Transistors

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4 Author(s)
Lemmon, A. ; Center for Adv. Vehicular Syst., Mississippi State Univ., Starkville, MS, USA ; Mazzola, M. ; Gafford, J. ; Parker, C.

Owing to their very low intrinsic capacitance and on-resistance, silicon carbide FETs have been shown to produce poor dynamics in certain power electronics applications, particularly those based on the half-bridge configuration. This letter catalogs three separate phenomena that are observed in the context of such applications and provides a detailed treatment of the most troublesome of these behaviors: the occurrence of sustained oscillation at switch turn-off. This behavior is analyzed in the context of established oscillator design theory; both simulation and experimental results are shown to verify this analysis; and practical suggestions are made to application designers to manage this behavior.

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Power Electronics, IEEE Transactions on  (Volume:28 ,  Issue: 10 )