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A 220 GHz InP HBT Solid-State Power Amplifier MMIC with 90mW POUT at 8.2dB Compressed Gain

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7 Author(s)
Reed, T.B. ; Santa Barbara Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA ; Rodwell, M. ; Griffith, Z. ; Rowell, P.
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A 220 GHz Solid State Power Amplifer MMIC is presented simultaneously demonstrating 90mW output power Pout and 8.2dB compressed gain. This 2-Stage, 8-Cell amplifier has 14.8 dB S21 gain at 220GHz, with small signal bandwidth from at least 190 to 240GHz. PDC is 4.46W. Amplifier cells were fabricated from a 250nm InP HBT technology, jointly with a substrate- shielded, thin-film microstrip wiring environment using BCB. The 90mW Pout is achieved by combining eight amplifier cascode cells. The use of two gain stages relaxes the RF source power demands, where only 13.6mW Pin is needed to achieve 90mW Pout. Over 10GHz bandwidth, at least 75mW Pout is observed from 210 to 220GHz.

Published in:

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE

Date of Conference:

14-17 Oct. 2012