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Full ETSI E-Band Doubler, Quadrupler and 24 dBm Power Amplifier

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14 Author(s)
Rodriguez, M.C. ; Sydney Design Centre, Macom Tech. Solutions, North Sydney, NSW, Australia ; Tarazi, J. ; Dadello, A. ; Convert, E.R.O.
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A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. The doubler and quadrupler circuits include medium power amplifiers to increase their gain and output power. The doubler has a measured output power greater than 15 dBm over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The quadrupler has similar output power over the ETSI E bands with a maximum output power of 19.2 dBm. The power amplifier has a maximum measured output power of 24.2 dBm (265 mW) and exceeds 23 dBm (200 mW) over the ETSI E bands. This amplifier has a measured small signal gain of 15 dB and the input and output return losses exceed 15 dB. Its measured PAE is above 8% across the ETSI E bands. This is the highest saturated output power (Psat) and PAE for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. Good agreement is demonstrated between measurement and simulation.

Published in:

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE

Date of Conference:

14-17 Oct. 2012