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In this paper, we have developed a new floating-gate-type Flash cell compact model based on the channel potential by using PSP metal-oxide-semiconductor description. Cell-to-cell coupling, Fowler-Nordheim tunneling, and new leakage current formulas have been implemented on Verilog-A compact model. The channel potential calculation of the PSP model enables accurate modeling of channel coupling and leakage currents which are associated with the boosted channel. In addition, the model parameter extraction procedure through 3-D technology computer-aided design (TCAD) and SPICE simulation is presented. The simulation results agree well with measured data of sub-20-nm nand cells.