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Ultrathin Silicon-on-Insulator Grating Couplers

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7 Author(s)
He, L. ; Department of Electrical and Computer Engineering, University of Delaware, Newark, DE, USA ; He, Y. ; Pomerene, A. ; Hill, C.
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We demonstrate a novel grating coupler fabricated on a silicon-on-insulator (SOI) wafer operating at 1550 nm, based on an ultrathin 50-nm silicon geometry. The devices are fabricated in a CMOS-compatible process with a single etch step. A low insertion loss of {-}{\rm 3.7}~{\rm dB} is achieved. We also calculate the backreflection loss to be {-}{\rm 14}~{\rm dB} . The devices are likely to be useful in terms of light coupling between optical fibers and ultrathin silicon waveguides.

Published in:

Photonics Technology Letters, IEEE  (Volume:24 ,  Issue: 24 )