By Topic

Soft Error Susceptibilities of 22 nm Tri-Gate Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Seifert, N. ; Intel Corp., Hillsboro, OR, USA ; Gill, B. ; Jahinuzzaman, S. ; Basile, J.
more authors

We report on measured radiation-induced soft error rates (SER) of memory and logic devices built in a 22 nm high-k metal gate bulk Tri-Gate technology. Our results demonstrate excellent single event upset (SEU) scaling benefits of tri-gate devices. For cosmic radiation, SEU SER reduction levels of the order of are observed relative to 32 nm planar devices, while for alpha-particles, the measured SEU SER benefit is in excess of . Similar improvements are observed for Tri-Gate combinational logic and memory array multi-cell upset (MCU) rates. Reduced SER (RSER) device SER performances (relative to standard, non -RSER devices) are on par or better than that of tested 32 nm planar devices. Finally, a novel, efficient SER reduction design called RTS is introduced.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:59 ,  Issue: 6 )