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On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology

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15 Author(s)
Loveless, T.D. ; Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA ; Kauppila, J.S. ; Jagannathan, S. ; Ball, D.R.
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Direct observation of fast-transient single event signatures often involves considerable uncertainty due to the limitations of monitoring circuitry. A built-in-self-test circuit for the measurement of single-event transients (SET) has been implemented in a 45 nm partially depleted silicon-on-insulator technology that allows for the extraction of measurement-induced uncertainty. SET pulse width data from heavy-ion experiments are provided and compared to technology computer aided design simulations. A method for compensating for the measurement bias and skew is provided.

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Nuclear Science, IEEE Transactions on  (Volume:59 ,  Issue: 6 )