By Topic

Reliability Concern on Extended E-SOA of SOI Power Devices With P-Sink Structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Qinsong Qian ; Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China ; Siyang Liu ; Weijun Wan ; Weifeng Sun

The P-sink structure is widely used in silicon-on-insulator (SOI) power devices (SOI-LIGBT and SOI-LDMOS) to extend the electrical safe operating area (E-SOA) as it can suppress the trigger of the parasitic transistor. In this paper, the electrical behavior and reliability issues in the extended E-SOA for 200-V SOI power devices with P-sink structures are investigated for the first time. For SOI-LIGBT, the normal I-V curve and small hot-carrier-induced degradation are observed in the extended E-SOA; thereby, the P-sink structure plays a good role. However, for SOI-LDMOS, two mechanisms dominate the electrical behavior in the extended E-SOA so as to bring the unusual “hump” in the I- V curve; meanwhile, it results in serious hot-carrier-induced degradation, reducing the lifetime of the device in practical applications. As a result, the P-sink structure is not the best choice to extend the E-SOA of SOI-LDMOS.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:13 ,  Issue: 1 )