By Topic

Design of a V-band single-substrate single-waveguide power-combined frequency doubler covering 50–75 GHz band

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Zhenhua Chen ; State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China ; Jinping Xu

In this work, we present the design and evaluation of a power-combined frequency doubler based on a single-substrate single-waveguide topology. Four UMS® Schottky diode chips DBES105a are mounted on a 50-mil-thick double-sided Rogers5880 substrate, which is placed along the E-plane of a single transmission waveguide. This configuration increases the power handling capability of the frequency doubler by an additional factor of 2 without any increase of block size. The design of a bias-less V-band frequency doubler is demonstrated based on this topology. The simulated conversion efficiency is 2.5%-7% across 50-75 GHz band, the peak efficiency appears at 63 GHz and a 32% 3dB bandwidth is achieved when driven with a 20 dBm input power.

Published in:

Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International

Date of Conference:

18-20 Sept. 2012