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Design of a V-band single-substrate single-waveguide power-combined frequency doubler covering 50–75 GHz band

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2 Author(s)
Zhenhua Chen ; State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China ; Jinping Xu

In this work, we present the design and evaluation of a power-combined frequency doubler based on a single-substrate single-waveguide topology. Four UMS® Schottky diode chips DBES105a are mounted on a 50-mil-thick double-sided Rogers5880 substrate, which is placed along the E-plane of a single transmission waveguide. This configuration increases the power handling capability of the frequency doubler by an additional factor of 2 without any increase of block size. The design of a bias-less V-band frequency doubler is demonstrated based on this topology. The simulated conversion efficiency is 2.5%-7% across 50-75 GHz band, the peak efficiency appears at 63 GHz and a 32% 3dB bandwidth is achieved when driven with a 20 dBm input power.

Published in:

Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International

Date of Conference:

18-20 Sept. 2012

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