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A high speed frequency divider in 0.18μm CMOS for wireless sensor networks

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5 Author(s)
Fan Xiangning ; Sch. of Inf. Sci. & Eng., Southeast Univ., Nanjing, China ; Li Bin ; Du Yanqiang ; Wang Yujie
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This paper presents a 1V low-voltage high speed frequency divider-by-2 which is fabricated in a standard 0.18μm TSMC RF CMOS process. Employing parallel current switching topology, the 2:1 frequency divider operates up to 6.5GHz while consuming 4.64mA current with test buffers at a supply voltage of 1V, and the chip area of the core circuit is 0.065×0.055mm2.

Published in:

Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International

Date of Conference:

18-20 Sept. 2012

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