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Alignment and exposure are the most critical steps in photolithography process, the resolution requirements and precise alignment are vital, each mask needs to be precisely aligned with original alignment mark. Otherwise, it can't successfully transfer the original pattern to the wafer surface causing device and circuit failure. By improving this resolution and alignment precision the minimum size can be further reduced to beyond nano and other important aspect of achieving minimum precised size is, the photo resist must be very sensitive to the exposure light to achieve reasonable throughput. However, if the sensitivity is too high, other photoresist characteristics can be affected, including the resolution. Here the study presented preliminary study fabrication on micro /nanowires with precise pattern transfer, there was a very little room for alignment error; we were able to achieved error free design to the critical dimension.