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We evaluated the stress in a thin strained-Si film on relaxed SiGe on a surface-oxidized Si substrate using surface enhanced Raman scattering (SERS). The strained-Si peak was enhanced by the SERS technique. However, the strained-Si peak shifted toward a higher wavenumber while the peaks from the Si substrate were unchanged. We performed Raman measurement under the optical geometry in LO and TO phonon active conditions. From these measurements, it was clarified that the peak shift was attributed to the TO phonon peak that appeared, which was caused by the excitation of the z polar component in the near-field light.