By Topic

Electronic states and curved surface effect of silicon quantum dots

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Huang, Wei-Qi ; Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025, China ; Huang, Zhong-Mei ; Cheng, Han-Qiong ; Miao, Xin-Jian
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The calculation results show that the bonding energy and electronic states of silicon quantum dots (Si QDs) are different on various curved surfaces (CS), for example, a Si-O-Si bridge bond on curved surface provides the localized levels in band gap and its bonding energy is shallower than that on facet. Curved surface breaks symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in band gap. The red-shifting of photoluminescence spectra on smaller silicon quantum dots can be explained by CS effect. In CS effect, surface curvature is determined by the shape of Si QDs or silicon nanostructures, which is independent of their sizes. The CS effect has the interesting fundamental physical properties in nanophysics as that of quantum confinement effect.

Published in:

Applied Physics Letters  (Volume:101 ,  Issue: 17 )