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Although the demand for high-power inductive power transfer (IPT) systems is on the rise, implementation of such IPT systems using low-cost semiconductor devices has been a challenge. This study presents a new IPT topology that facilitates easy integration of multiple IPT modules, which are made of low cost and freely available semiconductor components, to cater for high-power applications. An intermediate circuit, comprising an inductor-capacitor-inductor resonant network, serves as a contactless interface through which the modules of primary and secondary (pick-up) systems can be either series or parallel integrated. Inductor coils of the intermediate circuit and both primary and pick-up systems are magnetically coupled to allow for contactless power transfer. The proposed topology is parallel compensated to minimise its var requirement, and both the direction and amount of power flow are controlled by phase and/or magnitude modulation of voltages generated by primary and pick-up side converters. Theoretical analysis, together with simulations and experimental evidence of integrating four prototype bi-directional IPT systems to cater for 1.8 kW demand, is presented to show that the proposed new IPT topology is suitable for high-power applications, and flexible for both bi-directional and uni-directional contactless power transfer.