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A Global-Shutter CMOS Image Sensor With Readout Speed of 1-Tpixel/s Burst and 780-Mpixel/s Continuous

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10 Author(s)
Tochigi, Y. ; Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan ; Hanzawa, K. ; Kato, Y. ; Kuroda, R.
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A 400H×256V pixels global-shutter high-speed CMOS image sensor including 128 on-chip memories/pixel has been fabricated in a 0.18-μm 2P4M CMOS with pinned photodiode process. The key technologies of this image sensor are as follows: multiple on-chip memories for each pixel, spatial separation of pixel and on-chip memory regions, multiple pixel output wires for each column, in-pixel noise reduction circuits, in-pixel source-follower current-sources and flexibly selectable on-chip memories. This CMOS image sensor achieves 1 Tpixel/s burst video operation, a full resolution of 10 Mfps with 128 frames and a half resolution of 20 Mfps with 256 frames, and 780 Mpixel/s continuous video operation on the same chip. The power consumption at 1 Tpixel/s was 24 W, while the image sensor operates without active cooling.

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Solid-State Circuits, IEEE Journal of  (Volume:48 ,  Issue: 1 )