RF-microswitch on the basis of aluminum MEMS technology

The RF MEMS microswitch technology on the basis of aluminum and anodic aluminum oxide as the working and sacrificial layers, respectively are considered. It is shown that the use of local anodization of aluminum eliminates the need for additional procedures of sacrificial layers formation. Due to the lack of high-temperature operation the proposed technology allows creating the micromechanical systems on a single chip with the control electronics.