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Method of ohmic contact characterization from heat stability and contact resistance by example of contacts to SiC 6H

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1 Author(s)
Kudryk, Y.Y. ; Lashkaryov Inst. of Semicond. Phys. of NAS of Ukraine, Kiev, Ukraine

Using contacts to silicon carbide as an example, a method of ohmic contact characterization from heat stability and contact resistance is proposed. The method is based on the known empirical dependences of (i) contact resistivity on the semiconductor doping level and (ii) ohmic contact degradation on time and temperature.

Published in:

Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference

Date of Conference:

10-14 Sept. 2012

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