By Topic

Influence of surface morphology on the instrument characteristics of planar INP/GAAS Schottky diodes in millimeter range

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Torkhov, N.A. ; Sci.-Res. Inst. of Semicond., Tomsk, Russia ; Bozhkov, V.G. ; Novikov, V.A. ; Marmalyuk, A.A.
more authors

With the use of AFM it has been demonstrated one of the possible ideal surface states of the epitaxial layer n-InP, which allows obtaining the metal-semiconductor contacts in submillimeter range with a low Schottky barrier height φb<;0.5 eV, the ideality index n <;1.07, and series resistance RS <;10 ohm. It was shown in practice, that the semiconductor surface required to obtain quality metal-semiconductor contacts with Schottky barrier should be considered not only in terms of minimum linear dimensions of the irregularities and inhomogeneities, but also in terms of ideality of their statistical distribution, which is known to be characterized by a Gaussian function. At the same time, not all ideal states of n-InP surface can be equally suitable for obtaining of quality metal-semiconductor contacts with Schottky barrier.

Published in:

Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference

Date of Conference:

10-14 Sept. 2012