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This paper investigates degradation behavior induced by the self-heating effect for InGaZnO (IGZO) thin-film transistors (TFTs). Both the surrounding oxide and other thermal insulating materials, as well as the low thermal conductivity of the InGaZnO layer itself, cause the self-heating effect in InGaZnO TFTs. The heated channel layer enhances the threshold voltage shift, and the evolution of threshold voltage shift is found to be dominated by charge-trapping effects. Moreover, a nonuniform distribution of channel carrier concentration leads to an uneven temperature distribution throughout the IGZO active layer, which results in the asymmetrical degradation behavior after the self-heating operation. Further verifications indicate that the degree of the threshold voltage shift is only dependent on stress power, regardless of stress Vg, Vd, and channel length. Further, two-stage dependence of the threshold voltage shift on dynamic stress frequency is found.