Scheduled System Maintenance:
On Wednesday, July 29th, IEEE Xplore will undergo scheduled maintenance from 7:00-9:00 AM ET (11:00-13:00 UTC). During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Systematic Investigations on Self-Heating-Effect-Induced Degradation Behavior in a-InGaZnO Thin-Film Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Tien-Yu Hsieh ; Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan ; Ting-Chang Chang ; Te-Chih Chen ; Yu-Te Chen
more authors

This paper investigates degradation behavior induced by the self-heating effect for InGaZnO (IGZO) thin-film transistors (TFTs). Both the surrounding oxide and other thermal insulating materials, as well as the low thermal conductivity of the InGaZnO layer itself, cause the self-heating effect in InGaZnO TFTs. The heated channel layer enhances the threshold voltage shift, and the evolution of threshold voltage shift is found to be dominated by charge-trapping effects. Moreover, a nonuniform distribution of channel carrier concentration leads to an uneven temperature distribution throughout the IGZO active layer, which results in the asymmetrical degradation behavior after the self-heating operation. Further verifications indicate that the degree of the threshold voltage shift is only dependent on stress power, regardless of stress Vg, Vd, and channel length. Further, two-stage dependence of the threshold voltage shift on dynamic stress frequency is found.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 12 )