By Topic

Theoretical and Experimental Study of Inverse Piezoelectric Effect in AlGaN/GaN Field-Plated Heterostructure Field-Effect Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ando, Y. ; Renesas Electron. Corp., Otsu, Japan ; Ishikura, K. ; Yamanoguchi, K. ; Asano, K.
more authors

This paper reports the theoretical and experimental study of the inverse piezoelectric effect in AlGaN/GaN heterostructure field-effect transistors (HFETs) with field plate (FP) electrodes. The theoretical analysis based on the 2-D Monte Carlo simulation predicted that introducing the FP structure drastically decreases the elastic energy due to the inverse piezoelectric effect. The extension of gate-connected or source-connected FP electrode and thinning a SiN film under FP were found effective to improve the critical voltage (Vcrit) for degradation under reverse bias stress. Also, calculated trends of Vcrit as a function of FP lengths and a SiN film thickness were qualitatively verified by step-stress measurements of field-plated HFETs fabricated on Si substrates. These results clearly indicate that the optimization of the FP structure minimizes degradation associated with the inverse piezoelectric effect in AlGaN/GaN HFETs.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 12 )