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Sub-Micron Lithography Using InGaN Micro-LEDs: Mask-Free Fabrication of LED Arrays

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9 Author(s)
Guilhabert, B. ; Institute of Photonics, University of Strathclyde, Glasgow, U.K. ; Massoubre, D. ; Richardson, E. ; McKendry, J.J.D.
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The fabrication of gallium-nitride (GaN)-based light-emitting diode (LED) arrays by a direct writing technique, itself using micron-sized LEDs (micro-LEDs), is reported. CMOS-driven ultraviolet GaN-based micro-LED arrays are used to pattern photoresist layers with feature sizes as small as 500 nm. Checkerboard-type square LED array devices are then fabricated using such photoresist patterns based on either single pixel or multipixel direct writing, and implemented as part of a completely mask-less process flow. These exemplar arrays are composed of either 450-nm-emitting 199 ,\times, 199 \mu{\rm m}^{2} pixels on a 200- \mu{\rm m} pitch or 520-nm-emitting 21 ,\times, 18 \mu{\rm m}^{2} pixels on a 23- \mu{\rm m} pitch. Fill factors of 99% and 71.5% are achieved with optical output power densities per pixel of 5 and 20 {\rm W}/{\rm cm}^{2} at 90- and 6-mA dc-injected currents, respectively.

Published in:

Photonics Technology Letters, IEEE  (Volume:24 ,  Issue: 24 )