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Total gamma dose characteristics of CMOS devices in SOI structures based on oxidized porous silicon

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6 Author(s)
Bondarenko, V.P. ; Byelorussian State Univ. of Inf. & Radioelectron., Minsk, Byelorussia ; Bogatirev, Y.V. ; Colinge, J.P. ; Dolgyi, L.N.
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The electrical characteristics of complementary metal-oxide-semiconductor (CMOS) transistors and ring oscillators fabricated in porous silicon silicon-on-insulator (SOI) structures are presented before and after gamma irradiation. P-channel SOI/MOS transistors exhibit a front-gate threshold voltage shift of -0.2 and -0.55 V after exposure to doses of 1 and 10 Mrad(Si), respectively, under floating bias conditions, which are different from worst case conditions. For n-channel transistors the corresponding values are -0.1 and -0.2 V. The additional bottom and sidewall B+ ion implants with a dose of 2×1013 cm-2 are found to be effective to prevent leakage current along the n-channel transistor bottom and sidewalls. SOI/CMOS ring oscillators present a 40% higher speed in comparison with the same bulk CMOS devices and continued stable operation under a supply voltage of 3-5.5 V, for gamma irradiation up to 10 Mrad(Si), and an operating temperature ranging from 77 to 400 K

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Nuclear Science, IEEE Transactions on  (Volume:44 ,  Issue: 5 )