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High T0(140 K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates

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8 Author(s)
Otsubo, K. ; RWCP Opt. Interconnection Fujitsu Lab., Atsugi, Japan ; Shoji, H. ; Kusunoki, T. ; Suzuki, T.
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InGaAs-InAlGaAs strained quantum well lasers emitting in the 1.2 μm region have been fabricated on In0.22Ga0.78As ternary substrates. The threshold current density of the laser with highly reflective facets is 176 A/cm 2 at 20°C. The characteristic temperature (T0) of the device has reached 140 K, which is the highest value ever reported for long-wavelength semiconductor lasers

Published in:

Electronics Letters  (Volume:33 ,  Issue: 21 )