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ESD characterization of high mobility SiGe Quantum Well and Ge devices for future CMOS scaling

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8 Author(s)
Hellings, G. ; Electr. Eng. Dept., K.U. Leuven, Leuven, Belgium ; Linten, D. ; Thijs, S. ; Shih-Hung Chen
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The next technology option to keep CMOS scaling on pace after the introduction of finFETs, is the use of High Mobility channels. For the first time, the ESD reliability of such a technology option is studied for pMOS devices using SiGe Quantum Well and Ge channels.

Published in:

Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2012 34th

Date of Conference:

9-14 Sept. 2012