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The magnetic properties of exchange biased systems deposited on top of fullerene-based materials have been studied. An enhanced exchange bias field has been observed for Si/SiO2/C60/Co/Cu/Co/IrMn/Ta and Si/SiO2 /FeC60 /Co/Cu/Co/IrMn/Ta in comparison to a typical structure of Si/SiO2/Ta/Co/Cu/Co/IrMn/Ta. Here the magnetic properties of the devices are changed significantly with an organic underlayer or seed layer. The magnetic ordering is well maintained, and C60 seeding results in an exchange bias of (19.5 ±0.5) mT, some 7 mT higher than that of Ta seeded spin valves (12.5 ±0.5 mT). A combination of MOKE (magneto-optical Kerr effect), X-ray diffraction and Raman spectroscopy have been used to characterize the materials and further understand the interactions between the Co and fullerene-based materials.