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Robust Hall Effect Magnetic Field Sensors for Operation at High Temperatures and in Harsh Radiation Environments

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6 Author(s)
Abderrahmane, A. ; Electron.-Inspired Interdiscipl. Res. Inst. (EIIRIS), Toyohashi Univ. of Technol., Toyohashi, Japan ; Koide, S. ; Sato, S. ; Ohshima, T.
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We describe the fabrication and magnetoelectric properties of robust, high sensitivity Hall effect sensors fabricated using AlGaN/GaN and AlInSb/InAsSb/AlInSb heterostructures with a two-dimensional electron gas at the heterointerface. The sensitivity of AlInSb/InAsSb/AlInSb heterostructure clearly degrades above ~ 150°C. The AlGaN/GaN 2DEG Hall sensors were stable up to at least 400 °C and even after irradiation of 380 keV protons with a fluence of 1×1014 cm- 2, where AlInSb/InAsSb/AlInSb heterostructure showed an increase in the sheet carrier density. The feasibility of applications of the AlGaN/GaN and AlInSb/InAsSb/AlInSb Hall sensor for harsh radiation environment is discussed.

Published in:

Magnetics, IEEE Transactions on  (Volume:48 ,  Issue: 11 )

Date of Publication:

Nov. 2012

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