Skip to Main Content
We describe the fabrication and magnetoelectric properties of robust, high sensitivity Hall effect sensors fabricated using AlGaN/GaN and AlInSb/InAsSb/AlInSb heterostructures with a two-dimensional electron gas at the heterointerface. The sensitivity of AlInSb/InAsSb/AlInSb heterostructure clearly degrades above ~ 150°C. The AlGaN/GaN 2DEG Hall sensors were stable up to at least 400 °C and even after irradiation of 380 keV protons with a fluence of 1×1014 cm- 2, where AlInSb/InAsSb/AlInSb heterostructure showed an increase in the sheet carrier density. The feasibility of applications of the AlGaN/GaN and AlInSb/InAsSb/AlInSb Hall sensor for harsh radiation environment is discussed.