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Linearization and Field Detectivity in Magnetic Tunnel Junction Sensors Connected in Series Incorporating 16 nm-Thick NiFe Free Layers

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7 Author(s)
Janeiro, R.J. ; INESC-MN & IN, Lisbon, Portugal ; Gameiro, L. ; Lopes, A. ; Cardoso, S.
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In this work, arrays of MgO-based magnetic tunnel junction elements (5×20 μm2) connected in series are studied for sensor applications. Linearization is obtained by combining shape anisotropy with a longitudinal hard bias field set by CoCrPt permanent magnets integrated on the sides of the array. We show that this architecture has the drawback of a large footprint in the chip, but is largely compensated by the weak bias voltage dependence and huge electric robustness, when comparing with individual magnetic tunnel junctions.

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Magnetics, IEEE Transactions on  (Volume:48 ,  Issue: 11 )