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Strain Relaxation in Atomic Flat SrRu _{1-{\rm x}} O _{3} /SrTiO _{3} Layers Grown by Off-Axis RF-Sputtering

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4 Author(s)
Murtaza Bohra ; Department of Physics,, National Sun Yat-Sen University,, Kaohsiung,, Taiwan, R.O.C. ; H. J. Yeh ; C. P. Wu ; Hsiung Chou

Strain-relaxed atomically flat SrRu1-xO3 layers can be grown on SrTiO3 substrate by a standard off-axis RF sputtering technique without using buffer layers. High RF power generated a high concentration of Ru vacancies proportional to the enlarged unit cell volume. The strong interface strain is relaxed by nano-crystal-defects induced by the large Ru vacancies and thin amorphous layer sitting in between film-substrate interface. Because of the structural defects and large unit cell expansion, the TC is lowered to 110-137 K as compared to bulk value of 161 K. Strong uniaxial anisotropy along [001] direction indicates that the intrinsic bulk SrRuO3 anisotropy dominating over the lattice expansion induced cubic anisotropy.

Published in:

IEEE Transactions on Magnetics  (Volume:48 ,  Issue: 11 )