Referenced Items are not available for this document.
Direct detection of low-energy electrons (500-2000 eV) with a novel back-thinned CMOS active pixel sensor (APS) is reported in this paper. The sensor was installed in a JEOL 6400F scanning electron microscope to quantitatively test its linearity and spatial resolution by a focused electron beam. The obtained results show good linearity at electron beam energy values from 500 to 2000 eV. The full-width at half-maximum spatial resolution was around 2 pixels, a limit set by charge diffusion in the epilayer. These results show that this CMOS APS sensor is appropriate for low-energy electron detection providing the benefits of direct detection for many applications.
Published in:
Electron Devices, IEEE Transactions on
(Volume:59
,
Issue:
12
)
Date of Publication: Dec. 2012
- Page(s):
- 3594 - 3600
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 13136096
- Digital Object Identifier :
- 10.1109/TED.2012.2219623
- Product Type:
- Journals & Magazines
- Date of Publication :
- 18 October 2012
- Date of Current Version :
- 16 November 2012
- Issue Date :
- Dec. 2012
- Sponsored by :
- IEEE Electron Devices Society
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