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Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches

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6 Author(s)
Taeho Moon ; Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA ; Ji-Chul Jung ; Yong Han ; Youngin Jeon
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The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped p-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 12 )