Referenced Items are not available for this document.
A silicon (Si) solar cell structure with an integrated Si tunnel junction (TJ) is proposed for multijunction (MJ) solar cell applications. The TJ is fabricated on top of an ordinary Si solar cell via the proximity rapid thermal diffusion process. The fabricated solar cells with integrated TJs show nondegraded photovoltaic characteristics. The electrical performance of the TJs allows for normal operation of Si-based MJ solar cells under at least 250-sun illumination and can be improved to achieve compatibility for higher illumination levels. The structure reported in this letter serves as a promising candidate for use as a bottom cell with an integrated TJ for low-cost and high-efficiency MJ solar cells.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
12
)
Date of Publication: Dec. 2012
- Page(s):
- 1732 - 1734
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 13136605
- Digital Object Identifier :
- 10.1109/LED.2012.2217391
- Product Type:
- Journals & Magazines
- Date of Publication :
- 18 October 2012
- Date of Current Version :
- 22 November 2012
- Issue Date :
- Dec. 2012
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
