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Fabrication and Energy Band Alignment of n-ZnO/p-CuI Heterojunction

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6 Author(s)
Ding, K. ; Key Lab. of Optoelectron. Mater. Chem. & Phys., Fujian Inst. of Res. on the Struct. of Matter, Fuzhou, China ; Hu, Q.C. ; Chen, D.G. ; Zheng, Q.H.
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N-ZnO/P-CuI heterojunctions are fabricated by growing undoped n-type ZnO thin films on p-type γ-CuI (111) single-crystal substrates using radio-frequency magnetron sputtering. The ZnO films are identified to be columnar structured with c-axis-preferred orientation by using X-ray diffraction and scanning electron microscope. Measurements of the energy band alignment of ZnO/CuI interface by using X-ray photoelectron spectroscopy result in a valence band offset of 1.74 eV and a conduction band offset of -1.37 eV, meaning a type-II band alignment at the interface. A typical diodelike behavior of the current-voltage curve indicates its possible applications in optoelectronics with further development.

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Electron Device Letters, IEEE  (Volume:33 ,  Issue: 12 )