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A high-efficiency InGaN light-emitting diode (LED) structure was grown on a silane (SiH4)-treated undoped-GaN layer with a thin in situ grown SiN∞ layer and a 3-D island structure. A lateral one-step epitaxial growth process was performed on the SiH4-treated GaN island structure to form a series-of-embedded-air-void (SEAV) structure. The SEAV structure prevented the dislocation from propagating to the top LED epitaxial layer that reduced the leakage current and increased the internal quantum efficiency of the treated InGaN LED. The light output power of the treated LED had a 68% enhancement compared with that of the standard LED at 20 mA. The high output power and the narrow divergent angle of the treated LED structure were caused by the high light scattering process on the SEAV structure.